|Model Description||This physically based
provides most of the important device characteristics under static and
dynamic conditions. The model includes turn-on and turn-off
modulation effects, accurate reverse recovery waveforms, and the
resistance gate-cathode I-V characteristic. The model is designed using
the lumped-charge methodology.
This model has been available as a commercialized generic model in the Saber simulator with the template name: scr2.sin.
|Model Parameters: University Model||QGn=3.472e-17,
charge in P-gate
Equilibrium hole charge in N-base
Equilibrium hole charge in P-gate
Equil. electron charge in N-base
Hole transit time from 2 to 3
Hole transit time from 3 to 4
Hole transit time from 5 to 6
Base to gate volume ratio
Breakdown voltage of J2 junction
Breakdown voltage of J1 junction
Gate region contraction factor
Zero-biased junction J2 cap
Mobility ratio in low doped regions
Mobility ratio in high doped regions
Built-in potential of P+-N- junction
|Quality Classification:||3A (Commercial Model)
1A (University Model)
Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction.
|Original Support for Model Development||Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94|
|Documentation||C. L. Ma, P. O.
Lauritzen, J. Sigg,
"Modeling of High-Power Thyristors Using the Lumped-Charge Modeling
6th European Conference on Power Electronics and Applications, Spain,
C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994.
|Download Model Source Code||(University model only)|