| Model Description | This physically based
GTO model
provides most of the important device characteristics under static and
dynamic conditions. The model includes t accurate dynamic turn-off
anode
current and voltage waveforms, turn-on and turn-off conductivity
modulation
effects, and the negative resistance gate-cathode I-V characteristic.
The
model is designed using the lumped-charge methodology.
This model is available as a commercialized generic model in the Saber simulator with the template name: gto2.sin. |
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| Model
Parameters: Commercial Model |
Model parameters and default values for the commercial version are given in Analogy's SaberBook help system under "gto2". | ||
| Model Parameters: University Model | QGn=3.472e-17,
QBp=4e-13, QG=1.6e-3, QB=5e-6, Ij3BK0=1e-14, Vj3BK0=20, n0=2, vj2BK0=5k, rab=0.5, fv=6, Tp10= Tp20=34u, Tp30=Tp40=5u, fj2g=0.1, tauB=22.67u, tauG=6.43u |
Equilibrium
charge
in the gate Equilibrium charge in the base Equil. hole charge in P gate Equilibrium charge in N- base Saturation current of J2 Breakdown voltage of J3 Breakdown voltage at J2 |
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| Performance Level: | ACCURATE | ||
| Quality Classification: | 3A (Commercial Model)
1A (University Model) Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction. |
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| Original Support for Model Development | Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94 | ||
| Documentation | C. L. Ma, P. O.
Lauritzen, J. Sigg,
"A Physics-based GTO Model For Circuit Simulation", IEEE Power
Electronics
Specialists Conference, pp. 872-878, June 1995.
C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994. |
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| Download Model Source Code | (University model only) | ||