GTO with Dynamic Charge Storage

Model Description This physically based GTO model provides most of the important device characteristics under static and dynamic conditions. The model includes t accurate dynamic turn-off anode current and voltage waveforms, turn-on and turn-off conductivity modulation effects, and the negative resistance gate-cathode I-V characteristic. The model is designed using the lumped-charge methodology. 

This model is available as a commercialized generic model in the Saber simulator with the template name: gto2.sin. 

Model Parameters:
Commercial Model
Model parameters and default values for the commercial version are given in Analogy's SaberBook help system under "gto2".
Model Parameters: University Model QGn=3.472e-17, 
Tp10= Tp20=34u, 
Equilibrium charge in the gate 
Equilibrium charge in the base 
Equil. hole charge in P gate 
Equilibrium charge in N- base 
Saturation current of J2 
Breakdown voltage of J3 

Breakdown voltage at J2 
Anode base short resistor. 
Volume ratio of base and gate. 
Hole transit time in N- base.
Hole transit time in P gate. 
Gate side contraction factor 
Carrier lifetime in N- base 
Carrier lifetime in P gate

Performance Level:  ACCURATE
Quality Classification:  3A (Commercial Model)
1A (University Model)

Parameter extraction is NOT available. Unlike most of the other models on this set of Web pages, parameter extraction is very difficult as the model was designed without consideration for parameter extraction. 

Original Support for Model Development Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94
Documentation C. L. Ma, P. O. Lauritzen, J. Sigg, "A Physics-based GTO Model For Circuit Simulation", IEEE Power Electronics Specialists Conference, pp. 872-878, June 1995. 

C. L. Ma, "Modeling of Bipolar Power Semiconductor Devices", Ph.D. Dissertation, University of Washington, Seattle, Washington, December 1994.

Download Model Source Code (University model only)

Latest update: May 20, 2008 by