Model Description  This model is a thermal power diode model using the lumpedcharge technique. The model generates the dynamic device temperature and thermal characteristics from internal power dissipation. The model also includes voltagedependent reverse recovery, forward recovery, conductivity modulation, emitter recombination and includes both high and low level injection. Only the capacitance model is taken from the standard SPICE diode model.  
Model Parameters and Default Values  QB=1e8 (Coulombs) Qp0=1e16, qp0 > 1e8 b=3, tau3=1u, EM=1e10, T0=1u, m=0.5, VJ=0.7, fc=0.5, rs=.05, cjo=100p, PHIB=610.5, (Volts) IB=1.11e3 (Amperes) Tnom=27, Trs=0, TEM=0. 
Majority carrier base charge Minority carrier base charge Electron to hole mobility ratio Carrier lifetime Emitter rec. parameter Transit time of electrons Grading coefficient Builtin potential Foward bias cap. factor Series resistance Zero bias capacitance Voltage to deplete diode base Rev. rec. current modulation Default Device temperature Temperature coefficient of series resistance EM temperature coefficient tau3 temperature coefficient 
Performance Level:  THERMAL  
Quality Classification:  2B This model has been extensively used. Parameter extraction is available. 

Original Support for Model Development  CDADIC 1997  
Documentation 
The thermal model is not documented. The original accurate diode model is documented in: C. L. Ma, P. O. Lauritzen, J. Sigg, "Modeling of Power Diodes with the LumpedCharge Modeling Technique, IEEE Transactions on Power Electronics, Vol. 12, No. 3, pp . 398405, May 1997.  
Download Model Source Code  Saber
MAST HDL Model VerilogA HDL Model 