| Model Description | This model is an accurate power diode model using the lumped-charge technique. The model includes voltage-dependent reverse recovery, forward recovery, conductivity modulation, emitter recombination and includes both high and low level injection. | ||
| Model Parameters and Default Values | QB=1e-8 (Coulombs)
Qp0=1e-16, b=3, tau3=1u, EM=1e-10, T0=1u, m=0.5, VJ=0.7, fc=0.5, rs=.05, cjo=100p, PHIB=610.5, (Volts) IB=1.11e3 (Amperes) |
Majority
carrier base
charge Minority carrier base charge Electron to hole mobility ratio Carrier lifetime Emitter rec. parameter Transit time of electrons Grading coefficient Built-in potential Forward bias cap. factor Series resistance Zero bias capacitance Voltage to deplete diode base Rev. rec. current factor |
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| Performance Level: | ACCURATE | ||
| Quality Classification: | 2B This model has been extensively used Parameter extraction is available. |
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| Original Support for Model Development | Siemens AG, 1991-94 (Now Infineon), NSF-CDADIC, 1993-94 | ||
| Documentation | C. L. Ma, P. O. Lauritzen, J. Sigg, "Modeling of Power Diodes with the Lumped-Charge Modeling Technique, IEEE Transactions on Power Electronics, Vol. 12, No. 3, pp. 398-405, May 1997. | ||
| Download Model Source Code | |||