| Model Description | This model is an accurate power BJT model that includes static and dynamic quasi-saturation effects. The model is based on the lumped-charge methodology. | |
| Model Parameters | xmax = 1.2,
b = 3, va = 320, Qe = 1.67e-5, Qavg_b = 2.27e-8, Qc = 1e-9, Qi = 1.33e-14, Qnu = 1.05e-11, Tno = 2.274e-8, Taub = 3e-5, Taue = 1e-7, Tauc = 1e-7 |
Normalized drift+base width
Electron/hole mobility ratio Early voltage Emitter fixed charge Base fixed charge Collector fixed charge Intrinsic charge Epi-layer fixed charge Low-bias base transit time Base carrier lifetime Emitter carrier lifetime Collector carrier lifetime |
| Performance Level: | ACCURATE | |
| Quality Classification: | 1B
Only limited testing has been performed. Parameter extraction is available. |
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| Original Support for Model Development | CDADIC, 1995-97 | |
| Documentation | This model is described in Yafei
Bi, "Compact Modeling of Power Bipolar Transistor and Parasitic Bipolar
Transistor in LDMOS Structures", MSEE Thesis, University of Washington,
December 1998
The model represents a revision of the model described in N.Talwakar et al, " Power BJT Model for Circuit Simulation", IEEE PESC Power Electronics Specialists Conf. Record, Baveno, Italy, June 1996, pp. 50-55. A further description of this model and details on parameter extraction are given in N.Talwalkar, "Modeling the power bipolar junction transistor using the lumped-charge method", MSEE Thesis, University of Washington, June 1996. |
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| Download Model Source Code | ||